BSC019N04NSGATMA1 vs BSC0902NSIATMA1 Comparison
Detailed side-by-side comparison of BSC019N04NSGATMA1 by Infineon and BSC0902NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC019N04NSGATMA1
BSC019N04NSGATMA1 - 40V 100A OptiMOS N-Ch MOSFET | Infineon
BSC019N04NSGATMA1 β ActiveInfineon
BSC0902NSIATMA1
BSC0902NSIATMA1 - 30V N-Ch OptiMOS MOSFET, PG-TDSON-8 | Infineon
BSC0902NSIATMA1 β ActiveSpecification Comparison
| Parameter | BSC019N04NSGATMA1 | BSC0902NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.58 | $0.32 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS (trench) | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | 100 A |
| Continuous Drain Current (ID) at TA=25C | 30 A | 23 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10V | 2.5 mΞ© | β |
| RDS(on) typ at VGS=10V | 1.9 mΞ© | β |
| Gate-Source Threshold (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation (PD) at TA=25C | 2.5 W | β |
| Power Dissipation (PD) at TC=25C | 125 W | β |
| Operating Temperature Range | -55C to +150C | -55C to +150C (junction) |
| Package | PG-TDSON-8-1 (TDSON-8 FL) | PG-TDSON-8-6 (TDSON-8) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 30V |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) Max | β | 30 V |
| Gate-Source Voltage (VGS) Max | β | [DATA_NEEDED: VGS max rating] |
| On-State Resistance RDS(on) Max at VGS=10V | β | 2.8 mOhm |
| Gate Charge QG(0V..10V) | β | 24 nC |
| Output Charge QOSS | β | 17 nC |
| Power Dissipation (TA) | β | 2.5 W |
| Power Dissipation (TC) | β | 48 W |
| Built-in Diode | β | Yes (single with built-in diode) |
| MSL Level | β | [DATA_NEEDED: MSL rating] |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |