BSC019N06NSATMA1 vs BSC050N04LSGATMA1 Comparison
Detailed side-by-side comparison of BSC019N06NSATMA1 by Infineon and BSC050N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC019N06NSATMA1
BSC019N06NSATMA1 - 60V 100A 1.95mΞ© OptiMOS 5 MOSFET | Infineon
BSC019N06NSATMA1 β ActiveInfineon
BSC050N04LSGATMA1
BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon
BSC050N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC019N06NSATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.41 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSC019N06NSATMA1 | β |
| Technology / Family | OptiMOS 5 (N-channel trench MOSFET) | β |
| Drain-Source Voltage (VDS) Max | 60 V | β |
| Continuous Drain Current (ID) at TA=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | [DATA_NEEDED: pulsed drain current IDM] |
| On-State Resistance RDS(on) Max @ VGS=10V | 1.95 mΞ© (typ) | β |
| Gate-Source Threshold Voltage VGS(th) Typ | 3.3 V | β |
| Power Dissipation (PD) at TA=25C | 136 W | β |
| Operating Temperature Range | -55C to +150C (junction) | -55C to +150C |
| Package | PG-TDSON-8 FL (SuperSO8 5x6 mm) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | 1 |
| Channel Type | N-Channel Enhancement Mode | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Avalanche Rated | Yes | β |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 40 V |
| Gate-to-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current at 25C (ID, Ta) | β | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | β | 85 A |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 57 W |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Technology | β | OptiMOS 3 (trench MOSFET) |
| Avalanche Energy Rated | β | Yes (single-pulse avalanche) |