BSC019N08NS5ATMA1 vs BSC019N06NSATMA1 Comparison
Detailed side-by-side comparison of BSC019N08NS5ATMA1 by Infineon and BSC019N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC019N08NS5ATMA1
BSC019N08NS5ATMA1 - 80V 237A 1.9mOhm OptiMOS 5 MOSFET | Infineon
BSC019N08NS5ATMA1 β ActiveInfineon
BSC019N06NSATMA1
BSC019N06NSATMA1 - 60V 100A 1.95mΞ© OptiMOS 5 MOSFET | Infineon
BSC019N06NSATMA1 β ActiveSpecification Comparison
| Parameter | BSC019N08NS5ATMA1 | BSC019N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.78 | $0.92 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 5 (N-channel trench) | β |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) max | 80 V | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Continuous Drain Current (ID) at TA=25C | 28 A | 100 A |
| Continuous Drain Current (ID) at TC=25C | 237 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: IDM pulse rating] |
| On-Resistance RDS(on) max at VGS=10V | 1.9 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | 3.0 V | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge Qg] | β |
| Power Dissipation (TA=25C) | 3 W | β |
| Power Dissipation (TC=25C) | 214 W | β |
| Operating Temperature Range | -55 C to +150 C | -55C to +150C (junction) |
| Package | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | 1 |
| RoHS Status | Compliant | Compliant |
| Avalanche Rated | Yes | Yes |
| Part Number | β | BSC019N06NSATMA1 |
| Technology / Family | β | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) Max | β | 60 V |
| On-State Resistance RDS(on) Max @ VGS=10V | β | 1.95 mΞ© (typ) |
| Gate-Source Threshold Voltage VGS(th) Typ | β | 3.3 V |
| Power Dissipation (PD) at TA=25C | β | 136 W |
| Channel Type | β | N-Channel Enhancement Mode |
| Lead-Free | β | Yes |