BSC019N08NS5ATMA1 vs BSC0901NSIATMA1 Comparison
Detailed side-by-side comparison of BSC019N08NS5ATMA1 by Infineon and BSC0901NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC019N08NS5ATMA1
BSC019N08NS5ATMA1 - 80V 237A 1.9mOhm OptiMOS 5 MOSFET | Infineon
BSC019N08NS5ATMA1 β ActiveInfineon
BSC0901NSIATMA1
BSC0901NSIATMA1 - 30V 100A OptiMOS N-Ch MOSFET | Infineon
BSC0901NSIATMA1 β ActiveSpecification Comparison
| Parameter | BSC019N08NS5ATMA1 | BSC0901NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.78 | $0.38 |
| Manufacturer | Infineon Technologies | β |
| Technology | OptiMOS 5 (N-channel trench) | OptiMOS 25V N-Channel Power MOSFET |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) max | 80 V | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Continuous Drain Current (ID) at TA=25C | 28 A | β |
| Continuous Drain Current (ID) at TC=25C | 237 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 1.9 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | 3.0 V | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge Qg] | β |
| Power Dissipation (TA=25C) | 3 W | β |
| Power Dissipation (TC=25C) | 214 W | β |
| Operating Temperature Range | -55 C to +150 C | -55 C to +150 C |
| Package | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (5x6 mm with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | 1 |
| RoHS Status | Compliant | Compliant |
| Avalanche Rated | Yes | β |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at Ta=25C | β | 28 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| On-State Resistance (RDS(on)) at VGS=10V | β | 2.0 mOhm typical |
| On-State Resistance (RDS(on)) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | β | 2.2 V max |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge nC] |
| Power Dissipation (PD) at Ta=25C | β | 2.5 W |
| Power Dissipation (PD) at Tc | β | 69 W |
| Pin Count | β | 8 |
| Halogen-Free | β | Yes |