BSC019N08NS5ATMA1 vs BSF134N10NJ3GXUMA1 Comparison
Detailed side-by-side comparison of BSC019N08NS5ATMA1 by Infineon and BSF134N10NJ3GXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC019N08NS5ATMA1
BSC019N08NS5ATMA1 - 80V 237A 1.9mOhm OptiMOS 5 MOSFET | Infineon
BSC019N08NS5ATMA1 β ActiveInfineon
BSF134N10NJ3GXUMA1
BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon
BSF134N10NJ3GXUMA1 β ActiveSpecification Comparison
| Parameter | BSC019N08NS5ATMA1 | BSF134N10NJ3GXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.78 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 5 (N-channel trench) | Trench-gate OptiMOS planar |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) max | 80 V | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Continuous Drain Current (ID) at TA=25C | 28 A | β |
| Continuous Drain Current (ID) at TC=25C | 237 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | β |
| On-Resistance RDS(on) max at VGS=10V | 1.9 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | 3.0 V | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge Qg] | β |
| Power Dissipation (TA=25C) | 3 W | β |
| Power Dissipation (TC=25C) | 214 W | β |
| Operating Temperature Range | -55 C to +150 C | -55Β°C to +150Β°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] |
| Package | PG-TSON-8-3 (SuperSO8 5x6 mm) | MG-WDSON-2 (CanPAK M) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Avalanche Rated | Yes | β |
| Series | β | OptiMOS 100 V |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TA=25Β°C | β | 9 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 40 A |
| Power Dissipation (PD) at TA=25Β°C | β | 2.2 W |
| Power Dissipation (PD) at TC=25Β°C | β | 43 W |
| Configuration | β | Single with built-in diode |
| Terminal Position | β | Bottom |
| Terminal Finish | β | Silver Nickel |
| Gate Charge (Qg) | β | [DATA_NEEDED: Qg value] |
| RDS(on) at VGS=10V | β | [DATA_NEEDED: RDS(on) max value] |
| Body Diode Reverse Recovery | β | [DATA_NEEDED: trr value] |