BSC019N08NS5ATMA1 vs IAUZ18N10S5L420ATMA1 Comparison
Detailed side-by-side comparison of BSC019N08NS5ATMA1 by Infineon and IAUZ18N10S5L420ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC019N08NS5ATMA1
BSC019N08NS5ATMA1 - 80V 237A 1.9mOhm OptiMOS 5 MOSFET | Infineon
BSC019N08NS5ATMA1 β ActiveInfineon
IAUZ18N10S5L420ATMA1 - 100V 18A 42mΞ© N-Ch OptiMOS 5 | Infineon
IAUZ18N10S5L420ATMA1 β ActiveSpecification Comparison
| Parameter | BSC019N08NS5ATMA1 | IAUZ18N10S5L420ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.78 | $0.48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 5 (N-channel trench) | OptiMOS 5 trench |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) max | 80 V | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Continuous Drain Current (ID) at TA=25C | 28 A | β |
| Continuous Drain Current (ID) at TC=25C | 237 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | β |
| On-Resistance RDS(on) max at VGS=10V | 1.9 mOhm | 42 mΞ© |
| Gate Threshold Voltage VGS(th) typ | 3.0 V | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge Qg] | β |
| Power Dissipation (TA=25C) | 3 W | β |
| Power Dissipation (TC=25C) | 214 W | β |
| Operating Temperature Range | -55 C to +150 C | β |
| Package | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | 1 |
| RoHS Status | Compliant | Compliant |
| Avalanche Rated | Yes | β |
| Series | β | OptiMOS 5 100V |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 18 A |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | 1.7 V to 2.7 V |
| Total Gate Charge (Qg) typ. | β | 8.5 nC |
| Power Dissipation (PD) at TC=25Β°C | β | 30 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Automotive Qualification | β | AEC-Q101 qualified |
| Configuration | β | Single with built-in diode |