BSC023N08NS5SCATMA1 vs BSC052N08NS5ATMA1 Comparison

Detailed side-by-side comparison of BSC023N08NS5SCATMA1 by Infineon and BSC052N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC052N08NS5ATMA1

BSC052N08NS5ATMA1 - 80V 95A 5.2mΞ© OptiMOS 5 N-FET | Infineon

BSC052N08NS5ATMA1 βœ“ Active

Specification Comparison

Parameter BSC023N08NS5SCATMA1 BSC052N08NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.05 $0.52
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC023N08NS5SCATMA1 BSC052N08NS5ATMA1
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 5
Drain-Source Voltage (VDS) 80 V 80 V
Continuous Drain Current (ID, Tc=25Β°C) 202 A β€”
Power Dissipation (PD, Tc=25Β°C) 188 W β€”
On-State Resistance RDS(on) typ. 2.3 mΞ© at VGS=10 V, ID=50 A β€”
Gate Threshold Voltage VGS(th) typ. 3.8 V β€”
Total Gate Charge Qg 98 nC at VGS=10 V β€”
Input Capacitance Ciss 6.8 nF β€”
Output Capacitance Coss 74 pF β€”
Thermal Resistance RthJC 0.72 K/W β€”
Operating Junction Temperature -55 Β°C to +175 Β°C -55C to +150C
Package PG-WSON-8-2 (SuperSO8 DSC) PG-TDSON-8 (SuperSO8) 5x6 mm
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID, Tc) β€” 95 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V β€” 5.2 mΞ©
Gate-Source Voltage (VGS) β€” Β±20 V
Gate Threshold Voltage VGS(th) typ β€” 2.5-3.0 V
Total Power Dissipation (Tc) β€” 83 W
Total Power Dissipation (Ta) β€” 2.5 W
MSL Level β€” 1 (unlimited)

Datasheets & Resources

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