BSC023N08NS5SCATMA1 vs BSC0902NSIATMA1 Comparison
Detailed side-by-side comparison of BSC023N08NS5SCATMA1 by Infineon and BSC0902NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC023N08NS5SCATMA1 - 80V, 2.3mΞ© OptiMOS 5 Power MOSFET | Infineon
BSC023N08NS5SCATMA1 β ActiveInfineon
BSC0902NSIATMA1
BSC0902NSIATMA1 - 30V N-Ch OptiMOS MOSFET, PG-TDSON-8 | Infineon
BSC0902NSIATMA1 β ActiveSpecification Comparison
| Parameter | BSC023N08NS5SCATMA1 | BSC0902NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $0.32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC023N08NS5SCATMA1 | β |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | β |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID, Tc=25Β°C) | 202 A | β |
| Power Dissipation (PD, Tc=25Β°C) | 188 W | β |
| On-State Resistance RDS(on) typ. | 2.3 mΞ© at VGS=10 V, ID=50 A | β |
| Gate Threshold Voltage VGS(th) typ. | 3.8 V | β |
| Total Gate Charge Qg | 98 nC at VGS=10 V | β |
| Input Capacitance Ciss | 6.8 nF | β |
| Output Capacitance Coss | 74 pF | β |
| Thermal Resistance RthJC | 0.72 K/W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-WSON-8-2 (SuperSO8 DSC) | PG-TDSON-8-6 (TDSON-8) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Product Family | β | OptiMOS 30V |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) Max | β | 30 V |
| Gate-Source Voltage (VGS) Max | β | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TA=25C | β | 23 A |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-State Resistance RDS(on) Max at VGS=10V | β | 2.8 mOhm |
| Gate Charge QG(0V..10V) | β | 24 nC |
| Output Charge QOSS | β | 17 nC |
| Power Dissipation (TA) | β | 2.5 W |
| Power Dissipation (TC) | β | 48 W |
| Operating Temperature Range | β | -55C to +150C (junction) |
| Built-in Diode | β | Yes (single with built-in diode) |
| MSL Level | β | [DATA_NEEDED: MSL rating] |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |