BSC023N08NS5SCATMA1 vs BSC117N08NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC023N08NS5SCATMA1 by Infineon and BSC117N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC023N08NS5SCATMA1 - 80V, 2.3mΞ© OptiMOS 5 Power MOSFET | Infineon
BSC023N08NS5SCATMA1 β ActiveInfineon
BSC117N08NS5ATMA1
BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon
BSC117N08NS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC023N08NS5SCATMA1 | BSC117N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $0.46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC023N08NS5SCATMA1 | BSC117N08NS5ATMA1 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID, Tc=25Β°C) | 202 A | β |
| Power Dissipation (PD, Tc=25Β°C) | 188 W | β |
| On-State Resistance RDS(on) typ. | 2.3 mΞ© at VGS=10 V, ID=50 A | β |
| Gate Threshold Voltage VGS(th) typ. | 3.8 V | β |
| Total Gate Charge Qg | 98 nC at VGS=10 V | β |
| Input Capacitance Ciss | 6.8 nF | β |
| Output Capacitance Coss | 74 pF | β |
| Thermal Resistance RthJC | 0.72 K/W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-WSON-8-2 (SuperSO8 DSC) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | β | 80 V |
| Continuous Drain Current (ID) max | β | 49 A (Tc) |
| On-State Resistance (RDS(on)) max | β | 11.7 mOhm |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 50 W |
| Pin Count | β | 8 |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg value] |
| Operating Temperature Range | β | -55 C to +150 C (typical MOSFET junction) |
| Lead-Free | β | Yes |
| MSL Level | β | 1 |