BSC023N08NS5SCATMA1 vs BSZ130N03LSGATMA1 Comparison

Detailed side-by-side comparison of BSC023N08NS5SCATMA1 by Infineon and BSZ130N03LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC023N08NS5SCATMA1 BSZ130N03LSGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.05 $0.41
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC023N08NS5SCATMA1 β€”
Technology OptiMOS 5 (N-channel trench MOSFET) β€”
Drain-Source Voltage (VDS) 80 V β€”
Continuous Drain Current (ID, Tc=25Β°C) 202 A β€”
Power Dissipation (PD, Tc=25Β°C) 188 W β€”
On-State Resistance RDS(on) typ. 2.3 mΞ© at VGS=10 V, ID=50 A β€”
Gate Threshold Voltage VGS(th) typ. 3.8 V β€”
Total Gate Charge Qg 98 nC at VGS=10 V β€”
Input Capacitance Ciss 6.8 nF β€”
Output Capacitance Coss 74 pF β€”
Thermal Resistance RthJC 0.72 K/W β€”
Operating Junction Temperature -55 Β°C to +175 Β°C β€”
Package PG-WSON-8-2 (SuperSO8 DSC) PG-TSDSON-8 (8-PowerTDFN, 5x6 mm)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Part Family β€” OptiMOS 25V / 30V
Polarity / Channel Type β€” N-Channel Enhancement Mode
Drain-Source Voltage (Vds) β€” 30 V
Continuous Drain Current (Ta=25 C) β€” 10 A
Continuous Drain Current (Tc=25 C) β€” 35 A
On-State Resistance Rds(on) max @ Vgs=10V β€” 13 mOhm
Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA β€” 2.2 V
Power Dissipation (Ta) β€” 2.1 W
Power Dissipation (Tc) β€” 25 W
Operating Temperature Range β€” -55 C to +150 C (junction)
MSL Level β€” 1 (per JEDEC J-STD-020)
Lead-Free β€” Yes
Halogen-Free β€” Yes
Qualification β€” Industrial / Commercial (non-automotive)

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