BSC023N08NS5SCATMA1 vs IPB020N10N5LFATMA1 Comparison

Detailed side-by-side comparison of BSC023N08NS5SCATMA1 by Infineon and IPB020N10N5LFATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC023N08NS5SCATMA1 IPB020N10N5LFATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.05 $2.62
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC023N08NS5SCATMA1 β€”
Technology OptiMOS 5 (N-channel trench MOSFET) N-Channel Enhancement-Mode Power MOSFET
Drain-Source Voltage (VDS) 80 V β€”
Continuous Drain Current (ID, Tc=25Β°C) 202 A β€”
Power Dissipation (PD, Tc=25Β°C) 188 W β€”
On-State Resistance RDS(on) typ. 2.3 mΞ© at VGS=10 V, ID=50 A β€”
Gate Threshold Voltage VGS(th) typ. 3.8 V β€”
Total Gate Charge Qg 98 nC at VGS=10 V β€”
Input Capacitance Ciss 6.8 nF β€”
Output Capacitance Coss 74 pF β€”
Thermal Resistance RthJC 0.72 K/W β€”
Operating Junction Temperature -55 Β°C to +175 Β°C β€”
Package PG-WSON-8-2 (SuperSO8 DSC) PG-TO263-3 (D2PAK)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Product Family β€” OptiMOS 5 Linear FET
Drain-Source Voltage (VDS) max β€” 100 V
Continuous Drain Current (Tc) β€” 176 A
Silicon-Limited Drain Current β€” 289 A
Package-Limited Drain Current β€” 120 A
Pulsed Drain Current (VDS=56V, tp=10ms) β€” 10.2 A
On-State Resistance RDS(on) max β€” 2.0 mΞ©
Total Power Dissipation (Tc) β€” 313 W
Operating Temperature Range β€” -55 Β°C to +175 Β°C
Gate Threshold Voltage VGS(th) typ β€” 2.5 V
MSL Level β€” 1
Marking Code β€” 020N10LF

Datasheets & Resources

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