BSC027N06LS5ATMA1 vs BSC034N06NSATMA1 Comparison
Detailed side-by-side comparison of BSC027N06LS5ATMA1 by Infineon and BSC034N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC034N06NSATMA1
BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon
BSC034N06NSATMA1 β ActiveSpecification Comparison
| Parameter | BSC027N06LS5ATMA1 | BSC034N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.66 | $0.65 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOSβ’ 5 | β |
| Part Status | Active | β |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Gate-Source Voltage (VGS) | Β±20 V | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | Logic-level | [DATA_NEEDED: VGS(th)] |
| Continuous Drain Current (ID) at Tc=25Β°C | 100 A | β |
| Continuous Drain Current (ID) at Tc=100Β°C | [DATA_NEEDED: ID at Tc=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | [DATA_NEEDED: IDM] |
| On-Resistance (RDS(on)) max @ VGS=10V | 2.7 mOhm | β |
| On-Resistance (RDS(on)) @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Power Dissipation (PD) at Tc=25Β°C | 83 W | β |
| Operating Temperature Range | -55Β°C to +150Β°C | -55C to +150C |
| Package / Case | PG-TDSON-8-7 (SuperSO8 5x6) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| Gate Charge (Qg) | [DATA_NEEDED: total Qg] | β |
| Avalanche Energy Rated | Yes | β |
| RoHS Status | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | MSL1 | β |
| Polarity | β | N-Channel |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| On-Resistance RDS(on) max at VGS=10V | β | 3.4 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |
| Power Dissipation at Ta=25C | β | 2.5 W |
| Power Dissipation at Tc=25C | β | 74 W |
| Package | β | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| MSL Level | β | [DATA_NEEDED: MSL level] |