BSC027N06LS5ATMA1 vs BSC146N10LS5ATMA1 Comparison
Detailed side-by-side comparison of BSC027N06LS5ATMA1 by Infineon and BSC146N10LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC146N10LS5ATMA1
BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon
BSC146N10LS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC027N06LS5ATMA1 | BSC146N10LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.66 | $0.74 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOSβ’ 5 | β |
| Part Status | Active | β |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | OptiMOS 5 (logic-level) |
| Drain-Source Voltage (VDS) | 60 V | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | Logic-level | Logic-level (typ. ~1.7 V) |
| Continuous Drain Current (ID) at Tc=25Β°C | 100 A | β |
| Continuous Drain Current (ID) at Tc=100Β°C | [DATA_NEEDED: ID at Tc=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | β |
| On-Resistance (RDS(on)) max @ VGS=10V | 2.7 mOhm | β |
| On-Resistance (RDS(on)) @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Power Dissipation (PD) at Tc=25Β°C | 83 W | β |
| Operating Temperature Range | -55Β°C to +150Β°C | -55 C to +150 C (TJ max) |
| Package / Case | PG-TDSON-8-7 (SuperSO8 5x6) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| Gate Charge (Qg) | [DATA_NEEDED: total Qg] | β |
| Avalanche Energy Rated | Yes | β |
| RoHS Status | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | MSL1 | β |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) max | β | 100 V |
| Continuous Drain Current (ID) at Tc=25 C | β | 44 A |
| Pulsed Drain Current (ID,pulse) | β | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | β | 14.6 mOhm |
| RDS(on) max at VGS=4.5 V | β | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 52 W |
| Package | β | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Avalanche Energy (EAS) | β | [DATA_NEEDED: EAS] |