BSC027N06LS5ATMA1 vs BSZ018NE2LSATMA1 Comparison

Detailed side-by-side comparison of BSC027N06LS5ATMA1 by Infineon and BSZ018NE2LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 βœ“ Active
Infineon
BSZ018NE2LSATMA1 BSZ018NE2LSATMA1 - 25V OptiMOS N-Ch MOSFET, 23A/40A | Infineon

BSZ018NE2LSATMA1 - 25V OptiMOS N-Ch MOSFET, 23A/40A | Infineon

BSZ018NE2LSATMA1 βœ“ Active

Specification Comparison

Parameter BSC027N06LS5ATMA1 BSZ018NE2LSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.66 $0.31
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOSβ„’ 5 β€”
Part Status Active β€”
FET Type N-Channel β€”
Technology MOSFET (Metal Oxide) N-Channel Trench MOSFET
Drain-Source Voltage (VDS) 60 V 25 V
Gate-Source Voltage (VGS) Β±20 V β€”
Gate Threshold Voltage (VGS(th)) Logic-level β€”
Continuous Drain Current (ID) at Tc=25Β°C 100 A β€”
Continuous Drain Current (ID) at Tc=100Β°C [DATA_NEEDED: ID at Tc=100C] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] β€”
On-Resistance (RDS(on)) max @ VGS=10V 2.7 mOhm β€”
On-Resistance (RDS(on)) @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] β€”
Power Dissipation (PD) at Tc=25Β°C 83 W β€”
Operating Temperature Range -55Β°C to +150Β°C -55C to +150C
Package / Case PG-TDSON-8-7 (SuperSO8 5x6) β€”
Mounting Type Surface Mount Surface Mount
Pin Count 8 β€”
Gate Charge (Qg) [DATA_NEEDED: total Qg] β€”
Avalanche Energy Rated Yes β€”
RoHS Status Compliant Compliant
MSL (Moisture Sensitivity Level) MSL1 β€”
Product Family β€” OptiMOS 25V
Continuous Drain Current (TA) β€” 23 A
Continuous Drain Current (TC) β€” 40 A
Power Dissipation (TA) β€” 2.1 W
Power Dissipation (TC) β€” 69 W
On-Resistance RDS(on) β€” [DATA_NEEDED: RDS(on) typical at VGS=10V]
Gate Threshold Voltage VGS(th) β€” [DATA_NEEDED: typical VGS(th)]
Gate Charge Qg β€” [DATA_NEEDED: total gate charge at VGS=10V]
Package β€” PG-TSDSON-8-FL (8-pin TSDSON with exposed pad)
MSL Level β€” [DATA_NEEDED: MSL rating]
Lead-Free β€” Yes
Halogen-Free β€” Yes

Datasheets & Resources

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