BSC027N06LS5ATMA1 vs IPD60R380C6ATMA1 Comparison

Detailed side-by-side comparison of BSC027N06LS5ATMA1 by Infineon and IPD60R380C6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 βœ“ Active
Infineon
IPD60R380C6ATMA1 IPD60R380C6ATMA1 - 600V CoolMOS C6 N-Channel MOSFET | Infineon

IPD60R380C6ATMA1 - 600V CoolMOS C6 N-Channel MOSFET | Infineon

IPD60R380C6ATMA1 βœ“ Active

Specification Comparison

Parameter BSC027N06LS5ATMA1 IPD60R380C6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.66 $0.41
Manufacturer Infineon Technologies β€”
Series OptiMOSβ„’ 5 β€”
Part Status Active β€”
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) CoolMOS C6 Superjunction
Drain-Source Voltage (VDS) 60 V 600 V
Gate-Source Voltage (VGS) Β±20 V β€”
Gate Threshold Voltage (VGS(th)) Logic-level [DATA_NEEDED: gate threshold voltage]
Continuous Drain Current (ID) at Tc=25Β°C 100 A β€”
Continuous Drain Current (ID) at Tc=100Β°C [DATA_NEEDED: ID at Tc=100C] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] β€”
On-Resistance (RDS(on)) max @ VGS=10V 2.7 mOhm β€”
On-Resistance (RDS(on)) @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] β€”
Power Dissipation (PD) at Tc=25Β°C 83 W β€”
Operating Temperature Range -55Β°C to +150Β°C β€”
Package / Case PG-TDSON-8-7 (SuperSO8 5x6) β€”
Mounting Type Surface Mount Surface Mount
Pin Count 8 β€”
Gate Charge (Qg) [DATA_NEEDED: total Qg] β€”
Avalanche Energy Rated Yes β€”
RoHS Status Compliant Compliant
MSL (Moisture Sensitivity Level) MSL1 β€”
Continuous Drain Current (ID) at TC=25C β€” 10.6 A
Pulsed Drain Current (ID,pulse) β€” [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V β€” 380 mOhm
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: gate-source voltage max]
Total Gate Charge (Qg) β€” [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at TC=25C β€” 83 W
Operating Junction Temperature (TJ) β€” -55C to +150C
Storage Temperature β€” [DATA_NEEDED: storage temperature]
Package β€” PG-TO252-3 (DPAK)
MSL Level β€” [DATA_NEEDED: MSL level]
Drain-Tab Connection β€” Exposed pad (electrically connected to drain)

Datasheets & Resources

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