BSC027N06LS5ATMA1 vs IPG20N10S4L35ATMA1 Comparison
Detailed side-by-side comparison of BSC027N06LS5ATMA1 by Infineon and IPG20N10S4L35ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPG20N10S4L35ATMA1
IPG20N10S4L35ATMA1 - 100V Dual N-Ch MOSFET, 35mΩ | Infineon
IPG20N10S4L35ATMA1 ✓ ActiveSpecification Comparison
| Parameter | BSC027N06LS5ATMA1 | IPG20N10S4L35ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.66 | $0.66 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 5 | OptiMOS™, Automotive |
| Part Status | Active | — |
| FET Type | N-Channel | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level | — |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | — |
| Continuous Drain Current (ID) at Tc=100°C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | — |
| On-Resistance (RDS(on)) max @ VGS=10V | 2.7 mOhm | — |
| On-Resistance (RDS(on)) @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Power Dissipation (PD) at Tc=25°C | 83 W | — |
| Operating Temperature Range | -55°C to +150°C | — |
| Package / Case | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-4 (8-Pin TDSON EP) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | — |
| Gate Charge (Qg) | [DATA_NEEDED: total Qg] | — |
| Avalanche Energy Rated | Yes | — |
| RoHS Status | Compliant | Compliant (Green Product) |
| MSL (Moisture Sensitivity Level) | MSL1 | — |
| Part Number | — | IPG20N10S4L35ATMA1 |
| FET Feature | — | Logic Level Gate |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>) at 25°C | — | 20 A |
| R<sub>DS(on)</sub> Max | — | 35 mΩ @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A |
| Gate Threshold (V<sub>GS(th)</sub>) | — | [DATA_NEEDED: typical Vgs(th) value] |
| Power Dissipation (P<sub>D</sub>) | — | 43 W |
| Operating Temperature | — | 175°C max junction |
| Automotive Qualification | — | AEC-Q101 |
| MSL Level | — | MSL1 (up to 260°C peak reflow) |
| Avalanche Rated | — | 100% Avalanche Tested |