BSC027N10NS5ATMA1 vs BSC018N04LSGATMA1 Comparison
Detailed side-by-side comparison of BSC027N10NS5ATMA1 by Infineon and BSC018N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC027N10NS5ATMA1
BSC027N10NS5ATMA1 - 100V 194A OptiMOS 5 N-MOSFET | Infineon
BSC027N10NS5ATMA1 Nrnd
Specification Comparison
| Parameter | BSC027N10NS5ATMA1 | BSC018N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Nrnd | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.10 | $0.52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC027N10NS5ATMA1 | β |
| Technology | OptiMOS 5 (100V) | MOSFET (Metal Oxide) |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | β |
| Continuous Drain Current (ID) at Ta | 23 A | β |
| Continuous Drain Current (ID) at Tc | 100 A | β |
| Pulsed Drain Current (IDM) | 194 A | β |
| On-Resistance RDS(on) Max at VGS=10V | 2.7 mOhm | β |
| Power Dissipation (Ta) | 3 W | β |
| Power Dissipation (Tc) | 214 W | β |
| Package | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: Tj min/max] | -55Β°C to +150Β°C (TJ) |
| RoHS Status | Compliant | Compliant (Pb-free plating) |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Qualification | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) | β |
| Series | β | OptiMOS 3 |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) @ TC=25Β°C | β | 100 A |
| Continuous Drain Current (ID) @ TA=25Β°C | β | 30 A |
| Power Dissipation (PD) @ TC=25Β°C | β | 125 W |
| Power Dissipation (PD) @ TA=25Β°C | β | 2.5 W |
| RDS(on) Max @ VGS=10 V | β | 1.8 mΞ© |
| Drive Voltage (Max RDS(on), Min RDS(on)) | β | 4.5 V, 10 V |
| Gate Threshold Voltage (VGS(th)) Typ | β | [DATA_NEEDED: VGS(th) typical] |
| Avalanche Tested | β | 100% (per datasheet) |
| JEDEC Qualification | β | Yes (qualified per JEDEC for target applications) |