BSC027N10NS5ATMA1 vs BSC042NE7NS3GATMA1 Comparison

Detailed side-by-side comparison of BSC027N10NS5ATMA1 by Infineon and BSC042NE7NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC027N10NS5ATMA1

BSC027N10NS5ATMA1 - 100V 194A OptiMOS 5 N-MOSFET | Infineon

BSC027N10NS5ATMA1 Nrnd
Infineon
BSC042NE7NS3GATMA1

BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 βœ“ Active

Specification Comparison

Parameter BSC027N10NS5ATMA1 BSC042NE7NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Nrnd Active
Stock Status In Stock In Stock
Unit Price (USD) $1.10 $1.24
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC027N10NS5ATMA1 BSC042NE7NS3GATMA1
Technology OptiMOS 5 (100V) OptiMOS 3
Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 100 V 75 V
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] β€”
Continuous Drain Current (ID) at Ta 23 A 19 A
Continuous Drain Current (ID) at Tc 100 A 100 A
Pulsed Drain Current (IDM) 194 A β€”
On-Resistance RDS(on) Max at VGS=10V 2.7 mOhm β€”
Power Dissipation (Ta) 3 W β€”
Power Dissipation (Tc) 214 W β€”
Package PG-TSON-8-3 (SuperSO8 5x6 mm) PG-TDSON-8-1 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range [DATA_NEEDED: Tj min/max] -55C to +150C
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL rating] 1
Qualification Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) β€”
Transistor Type β€” N-Channel MOSFET
RDS(on) max at VGS=10V β€” 4.2 mOhm
Gate-Source Voltage (VGS) max β€” +/-20 V
Gate Threshold Voltage (VGS(th)) typ β€” 1.7 V
Power Dissipation (PD) at Ta β€” 2.5 W
Power Dissipation (PD) at Tc β€” 125 W

Datasheets & Resources

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