BSC027N10NS5ATMA1 vs BSC0993NDATMA1 Comparison
Detailed side-by-side comparison of BSC027N10NS5ATMA1 by Infineon and BSC0993NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC027N10NS5ATMA1
BSC027N10NS5ATMA1 - 100V 194A OptiMOS 5 N-MOSFET | Infineon
BSC027N10NS5ATMA1 NrndInfineon
BSC0993NDATMA1
BSC0993NDATMA1 - 30V 17A Dual N-Ch OptiMOS 5 Array | Infineon
BSC0993NDATMA1 β ActiveSpecification Comparison
| Parameter | BSC027N10NS5ATMA1 | BSC0993NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Nrnd | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.10 | $1.32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC027N10NS5ATMA1 | β |
| Technology | OptiMOS 5 (100V) | OptiMOS 5 trench MOSFET |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | β |
| Continuous Drain Current (ID) at Ta | 23 A | β |
| Continuous Drain Current (ID) at Tc | 100 A | β |
| Pulsed Drain Current (IDM) | 194 A | β |
| On-Resistance RDS(on) Max at VGS=10V | 2.7 mOhm | β |
| Power Dissipation (Ta) | 3 W | β |
| Power Dissipation (Tc) | 214 W | β |
| Package | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TISON-8 |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: Tj min/max] | -55C to +150C (junction) |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Qualification | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) | β |
| Product Series | β | OptiMOS 5 30V |
| Configuration | β | Dual N-Channel (Array) |
| Drain-Source Voltage (Vds) | β | 30 V |
| Continuous Drain Current (Id) @ Ta | β | 17 A |
| Channel Mode | β | Enhancement |
| ESD Protection | β | Yes (integrated) |
| Lead-Free | β | Yes |
| Rds(on) max @ Vgs=10V | β | [DATA_NEEDED: Rds(on) value] |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) value] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg value] |