BSC027N10NS5ATMA1 vs BSC100N10NSFGATMA1 Comparison
Detailed side-by-side comparison of BSC027N10NS5ATMA1 by Infineon and BSC100N10NSFGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC027N10NS5ATMA1
BSC027N10NS5ATMA1 - 100V 194A OptiMOS 5 N-MOSFET | Infineon
BSC027N10NS5ATMA1 NrndInfineon
BSC100N10NSFGATMA1
BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΞ© | Infineon
BSC100N10NSFGATMA1 β ActiveSpecification Comparison
| Parameter | BSC027N10NS5ATMA1 | BSC100N10NSFGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Nrnd | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.10 | $1.49 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC027N10NS5ATMA1 | β |
| Technology | OptiMOS 5 (100V) | MOSFET (Metal Oxide) |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | β |
| Continuous Drain Current (ID) at Ta | 23 A | β |
| Continuous Drain Current (ID) at Tc | 100 A | β |
| Pulsed Drain Current (IDM) | 194 A | β |
| On-Resistance RDS(on) Max at VGS=10V | 2.7 mOhm | β |
| Power Dissipation (Ta) | 3 W | β |
| Power Dissipation (Tc) | 214 W | β |
| Package | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: Tj min/max] | -55C to +150C (junction) |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Qualification | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) | β |
| Series | β | OptiMOS |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID), Ta | β | 11.4 A |
| Continuous Drain Current (ID), Tc | β | 90 A |
| Power Dissipation (PD), Tc | β | 156 W |
| Drain-Source On-Resistance (RDS(on)) max | β | 10 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: typical VGS(th) value] |
| Gate Drive Voltage (recommended) | β | 10 V (for rated RDS(on)) |