BSC027N10NS5ATMA1 vs BSC118N10NSGATMA1 Comparison
Detailed side-by-side comparison of BSC027N10NS5ATMA1 by Infineon and BSC118N10NSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC118N10NSGATMA1 - 100V 71A N-Channel OptiMOS MOSFET | Infineon
BSC118N10NSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC027N10NS5ATMA1 | BSC118N10NSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Nrnd | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.10 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC027N10NS5ATMA1 | β |
| Technology | OptiMOS 5 (100V) | Trench MOSFET |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | β |
| Continuous Drain Current (ID) at Ta | 23 A | β |
| Continuous Drain Current (ID) at Tc | 100 A | β |
| Pulsed Drain Current (IDM) | 194 A | β |
| On-Resistance RDS(on) Max at VGS=10V | 2.7 mOhm | β |
| Power Dissipation (Ta) | 3 W | β |
| Power Dissipation (Tc) | 214 W | β |
| Package | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (TDSON EP, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: Tj min/max] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Qualification | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) | β |
| Product Family | β | OptiMOS 2 |
| FET Type | β | N-Channel |
| Mode | β | Enhancement (Normal Level) |
| Continuous Drain Current (ID) at Ta=25C | β | 11 A |
| Continuous Drain Current (ID) at Tc=25C | β | 71 A |
| Power Dissipation (PD) at Tc=25C | β | 114 W |
| Operating Junction Temperature | β | -55 C to +150 C |
| Lead Plating | β | Pb-free |
| Halogen-Free | β | Yes |
| JEDEC Qualification | β | Qualified per target application |
| Target Application | β | High-frequency SMPS, synchronous rectification |
| Gate Charge x RDS(on) FOM | β | Excellent (per datasheet) |