BSC030N03LSGATMA1 vs BSC019N04NSGATMA1 Comparison
Detailed side-by-side comparison of BSC030N03LSGATMA1 by Infineon and BSC019N04NSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC030N03LSGATMA1
BSC030N03LSGATMA1 - 30V 100A 3mOhm OptiMOS 3 N-FET | Infineon
BSC030N03LSGATMA1 β ActiveInfineon
BSC019N04NSGATMA1
BSC019N04NSGATMA1 - 40V 100A OptiMOS N-Ch MOSFET | Infineon
BSC019N04NSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC030N03LSGATMA1 | BSC019N04NSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.58 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 3 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (Vdss) | 30 V | β |
| Continuous Drain Current (Id) @ Tc=25C | 100 A | β |
| Continuous Drain Current (Id) @ Ta=25C | 23 A | β |
| RDS(on) Max @ VGS=10V | 3 mOhm | β |
| RDS(on) Max @ VGS=4.5V | [DATA_NEEDED: typical RDS(on) at VGS=4.5V] | β |
| Gate Threshold Voltage (Vgs th) Typ | 2.2 V | β |
| Gate Charge (Qg) Typ @ VGS=15V | 55 nC | β |
| Output Charge (Qoss) | 66 pF | β |
| Input Capacitance (Ciss) Typ | 4.3 nF | β |
| Power Dissipation (Pd) @ Ta=25C | 2.5 W | β |
| Power Dissipation (Pd) @ Tc=25C | 69 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (TDSON-8 FL) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | β |
| Avalanche Rated | Yes (100% tested) | β |
| Transistor Type | β | N-Channel MOSFET |
| Technology | β | OptiMOS (trench) |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Continuous Drain Current (ID) at TA=25C | β | 30 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max at VGS=10V | β | 2.5 mΞ© |
| RDS(on) typ at VGS=10V | β | 1.9 mΞ© |
| Gate-Source Threshold (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TA=25C | β | 2.5 W |
| Power Dissipation (PD) at TC=25C | β | 125 W |
| Operating Temperature Range | β | -55C to +150C |