BSC030N03LSGATMA1 vs BSZ065N03LSATMA1 Comparison
Detailed side-by-side comparison of BSC030N03LSGATMA1 by Infineon and BSZ065N03LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC030N03LSGATMA1
BSC030N03LSGATMA1 - 30V 100A 3mOhm OptiMOS 3 N-FET | Infineon
BSC030N03LSGATMA1 β ActiveInfineon
BSZ065N03LSATMA1
BSZ065N03LSATMA1 - 30V N-Channel OptiMOS MOSFET | Infineon
BSZ065N03LSATMA1 β ActiveSpecification Comparison
| Parameter | BSC030N03LSGATMA1 | BSZ065N03LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | OptiMOS 30V |
| FET Type | N-Channel | β |
| Drain-Source Voltage (Vdss) | 30 V | β |
| Continuous Drain Current (Id) @ Tc=25C | 100 A | β |
| Continuous Drain Current (Id) @ Ta=25C | 23 A | β |
| RDS(on) Max @ VGS=10V | 3 mOhm | β |
| RDS(on) Max @ VGS=4.5V | [DATA_NEEDED: typical RDS(on) at VGS=4.5V] | β |
| Gate Threshold Voltage (Vgs th) Typ | 2.2 V | β |
| Gate Charge (Qg) Typ @ VGS=15V | 55 nC | β |
| Output Charge (Qoss) | 66 pF | β |
| Input Capacitance (Ciss) Typ | 4.3 nF | β |
| Power Dissipation (Pd) @ Ta=25C | 2.5 W | β |
| Power Dissipation (Pd) @ Tc=25C | 69 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 |
| Avalanche Rated | Yes (100% tested) | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at TA=25C | β | 12 A |
| Continuous Drain Current (ID) at TC=25C | β | 40 A |
| Power Dissipation (PD) at TA=25C | β | 2.1 W |
| Power Dissipation (PD) at TC=25C | β | 26 W |
| Package / Case | β | PG-TSDSON-8-FL (S308) |
| Configuration | β | Single N-Channel |
| Technology | β | Trench MOSFET (OptiMOS) |
| Operating Temperature Range | β | -55C to +150C (junction) |
| Gate Drive (typical) | β | 4.5 V |