BSC032N04LSATMA1 vs BSC059N04LS6ATMA1 Comparison

Detailed side-by-side comparison of BSC032N04LSATMA1 by Infineon and BSC059N04LS6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC032N04LSATMA1

BSC032N04LSATMA1 - 40V 3.2mΞ© OptiMOS 5 N-MOSFET | Infineon

BSC032N04LSATMA1 βœ“ Active
Infineon
BSC059N04LS6ATMA1

BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon

BSC059N04LS6ATMA1 βœ“ Active

Specification Comparison

Parameter BSC032N04LSATMA1 BSC059N04LS6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.32 $0.74
Manufacturer Infineon Technologies β€”
Part Series OptiMOS 5 40V β€”
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at Ta=25Β°C 21 A β€”
Continuous Drain Current (ID) at Tc=25Β°C 98 A β€”
RDS(on) max at VGS=10V 3.2 mΞ© β€”
Power Dissipation (Ta) 2.5 W β€”
Power Dissipation (Tc) 52 W β€”
Gate-Source Voltage (VGS) Β±20 V β€”
Technology OptiMOS 5 trench OptiMOS 6 (N-channel MOSFET)
Package PG-TDSON-8-6 (SuperSO8 5x6 mm) PG-TDSON-8-6 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Operating Junction Temperature -55Β°C to +175Β°C β€”
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Continuous Drain Current (ID) at TA=25C β€” 17 A
Continuous Drain Current (ID) at TC=25C β€” 49 A
Pulsed Drain Current (ID,pulse) at TC=25C β€” 59 A
On-Resistance RDS(on) max β€” 5.9 mOhm at VGS=10 V
Total Power Dissipation at TA=25C β€” 3 W
Total Power Dissipation at TC=25C β€” 38 W
Gate-Source Voltage (VGS) max β€” +/-20 V
Operating Temperature Range β€” -55C to +150C
Diode Continuous Forward Current (IS) β€” 38 A at TC=25C
Diode Pulse Current (IS,pulse) β€” 236 A at TC=25C

Datasheets & Resources

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