BSC032N04LSATMA1 vs IPD031N06L3GATMA1 Comparison

Detailed side-by-side comparison of BSC032N04LSATMA1 by Infineon and IPD031N06L3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC032N04LSATMA1

BSC032N04LSATMA1 - 40V 3.2mΞ© OptiMOS 5 N-MOSFET | Infineon

BSC032N04LSATMA1 βœ“ Active

Specification Comparison

Parameter BSC032N04LSATMA1 IPD031N06L3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.32 $0.48
Manufacturer Infineon Technologies β€”
Part Series OptiMOS 5 40V β€”
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 40 V β€”
Continuous Drain Current (ID) at Ta=25Β°C 21 A β€”
Continuous Drain Current (ID) at Tc=25Β°C 98 A β€”
RDS(on) max at VGS=10V 3.2 mΞ© β€”
Power Dissipation (Ta) 2.5 W β€”
Power Dissipation (Tc) 52 W β€”
Gate-Source Voltage (VGS) Β±20 V β€”
Technology OptiMOS 5 trench MOSFET (Metal Oxide)
Package PG-TDSON-8-6 (SuperSO8 5x6 mm) PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
Operating Junction Temperature -55Β°C to +175Β°C β€”
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Drain-to-Source Voltage (VDS) β€” 60 V
Continuous Drain Current (ID) at TC=25Β°C β€” 100 A
Pulsed Drain Current (IDM) β€” 400 A
Maximum Power Dissipation (PD) at TC=25Β°C β€” 167 W
RDS(on) Max at VGS=10V β€” 3.1 mΞ©
Gate Threshold Voltage (VGS(th)) β€” 1.0 V to 2.2 V
Gate Drive Voltage (Max RDS(on)) β€” 4.5 V, 10 V
Total Gate Charge (Qg) Typ β€” [DATA_NEEDED: Qg typical value]
Operating Temperature Range β€” -55Β°C to +175Β°C
Series β€” OptiMOS 3
MSL Level β€” 1 (Unlimited)

Datasheets & Resources

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