BSC033N08NS5SCATMA1 vs BSC027N10NS5ATMA1 Comparison

Detailed side-by-side comparison of BSC033N08NS5SCATMA1 by Infineon and BSC027N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC033N08NS5SCATMA1

BSC033N08NS5SCATMA1 - 80V 3.3mOhm N-Ch MOSFET | Infineon

BSC033N08NS5SCATMA1 βœ“ Active
Infineon
BSC027N10NS5ATMA1

BSC027N10NS5ATMA1 - 100V 194A OptiMOS 5 N-MOSFET | Infineon

BSC027N10NS5ATMA1 Nrnd

Specification Comparison

Parameter BSC033N08NS5SCATMA1 BSC027N10NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Nrnd
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $1.10
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 β€”
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 80 V 100 V
Continuous Drain Current (Tc) 144 A β€”
Power Dissipation (Tc) 136 W 214 W
RDS(on) max @ VGS=10V 3.3 mOhm β€”
Gate-Source Voltage (VGS) +/- 20 V β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] β€”
Thermal Resistance RthJC 0.86 K/W β€”
Package PG-WSON-8-2 (SuperSO8 DSC) PG-TSON-8-3 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C [DATA_NEEDED: Tj min/max]
Technology Trench (OptiMOS 5) OptiMOS 5 (100V)
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical value] β€”
RoHS Status Compliant Compliant
MSL Level 1 [DATA_NEEDED: MSL rating]
Part Number β€” BSC027N10NS5ATMA1
Channel Type β€” N-Channel
Gate-Source Voltage (VGS) Max β€” [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at Ta β€” 23 A
Continuous Drain Current (ID) at Tc β€” 100 A
Pulsed Drain Current (IDM) β€” 194 A
On-Resistance RDS(on) Max at VGS=10V β€” 2.7 mOhm
Power Dissipation (Ta) β€” 3 W
Qualification β€” Industrial (AEC-Q101 variant BSC027N10NS5 exists separately)

Datasheets & Resources

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