BSC033N08NS5SCATMA1 vs BSC052N08NS5ATMA1 Comparison

Detailed side-by-side comparison of BSC033N08NS5SCATMA1 by Infineon and BSC052N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC033N08NS5SCATMA1

BSC033N08NS5SCATMA1 - 80V 3.3mOhm N-Ch MOSFET | Infineon

BSC033N08NS5SCATMA1 βœ“ Active
Infineon
BSC052N08NS5ATMA1

BSC052N08NS5ATMA1 - 80V 95A 5.2mΞ© OptiMOS 5 N-FET | Infineon

BSC052N08NS5ATMA1 βœ“ Active

Specification Comparison

Parameter BSC033N08NS5SCATMA1 BSC052N08NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.52
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 β€”
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 80 V 80 V
Continuous Drain Current (Tc) 144 A β€”
Power Dissipation (Tc) 136 W β€”
RDS(on) max @ VGS=10V 3.3 mOhm β€”
Gate-Source Voltage (VGS) +/- 20 V Β±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] β€”
Thermal Resistance RthJC 0.86 K/W β€”
Package PG-WSON-8-2 (SuperSO8 DSC) PG-TDSON-8 (SuperSO8) 5x6 mm
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C β€”
Technology Trench (OptiMOS 5) OptiMOS 5
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical value] β€”
RoHS Status Compliant Compliant
MSL Level 1 1 (unlimited)
Part Number β€” BSC052N08NS5ATMA1
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID, Tc) β€” 95 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V β€” 5.2 mΞ©
Gate Threshold Voltage VGS(th) typ β€” 2.5-3.0 V
Total Power Dissipation (Tc) β€” 83 W
Total Power Dissipation (Ta) β€” 2.5 W
Operating Junction Temperature β€” -55C to +150C

Datasheets & Resources

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