BSC034N06NSATMA1 vs BSC0502NSIATMA1 Comparison
Detailed side-by-side comparison of BSC034N06NSATMA1 by Infineon and BSC0502NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC034N06NSATMA1
BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon
BSC034N06NSATMA1 β ActiveInfineon
BSC0502NSIATMA1
BSC0502NSIATMA1 - 30V N-Channel OptiMOS 5 MOSFET 2.3mOhm | Infineon
BSC0502NSIATMA1 β ActiveSpecification Comparison
| Parameter | BSC034N06NSATMA1 | BSC0502NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.85 |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 60 V | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mOhm | β |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | β |
| Power Dissipation at Ta=25C | 2.5 W | β |
| Power Dissipation at Tc=25C | 74 W | β |
| Operating Temperature Range | -55C to +150C | -55C to +150C |
| Technology | OptiMOS 5 | OptiMOS 5 (Trench MOSFET) |
| Package | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| RoHS Status | Compliant | Compliant |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) Max | β | 30 V |
| Continuous Drain Current (ID) at TC | β | 100 A |
| Continuous Drain Current (ID) at TA | β | 26 A |
| RDS(on) Max at VGS=10V | β | 2.3 mOhm |
| Gate Charge QG (0V to 4.5V) Typ | β | 9.0 nC |
| Output Charge QOSS Typ | β | 13.5 nC |
| Power Dissipation at TA (Ta=25C) | β | 2.5 W |
| Power Dissipation at TC (Tc=25C) | β | 43 W |
| Gate Threshold Voltage VGS(th) Typ | β | [DATA_NEEDED: VGS(th) typical value] |