BSC034N06NSATMA1 vs BSC066N06NSATMA1 Comparison
Detailed side-by-side comparison of BSC034N06NSATMA1 by Infineon and BSC066N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC034N06NSATMA1
BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon
BSC034N06NSATMA1 ✓ ActiveInfineon
BSC066N06NSATMA1
BSC066N06NSATMA1 - 60V N-Ch MOSFET 6.6mΩ OptiMOS | Infineon
BSC066N06NSATMA1 ✓ ActiveSpecification Comparison
| Parameter | BSC034N06NSATMA1 | BSC066N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.49 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | 256 A |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mOhm | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | 1.7 V (typ) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | 26 nC (typ) |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Power Dissipation at Tc=25C | 74 W | — |
| Operating Temperature Range | -55C to +150C | — |
| Technology | OptiMOS 5 | OptiMOS 5 60 V trench-gate |
| Package | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (TDSON EP) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL level] | 1 |
| RoHS Status | Compliant | Compliant |
| Continuous Drain Current (ID) at TC=25°C | — | 64 A |
| Continuous Drain Current (ID) at TC=100°C | — | 45 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 6.6 mΩ (max) |
| Power Dissipation (PD) at TC=25°C | — | 46 W |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Thermal Resistance, Junction-to-Case (RθJC) | — | 1.3 °C/W |
| Operating Junction Temperature | — | -55°C to +150°C |