BSC034N06NSATMA1 vs BSC0911NDATMA1 Comparison
Detailed side-by-side comparison of BSC034N06NSATMA1 by Infineon and BSC0911NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC034N06NSATMA1
BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon
BSC034N06NSATMA1 β ActiveInfineon
BSC0911NDATMA1
BSC0911NDATMA1 - 25V Dual N-Channel MOSFET Array | Infineon
BSC0911NDATMA1 β ActiveSpecification Comparison
| Parameter | BSC034N06NSATMA1 | BSC0911NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.46 |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 60 V | 25 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | 30 A |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mOhm | β |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: total gate charge] |
| Power Dissipation at Ta=25C | 2.5 W | β |
| Power Dissipation at Tc=25C | 74 W | β |
| Operating Temperature Range | -55C to +150C | β |
| Technology | OptiMOS 5 | OptiMOS trench MOSFET |
| Package | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TISON-8 (8-PowerTDFN) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 25V |
| Configuration | β | Dual N-Channel (2 N-CH) |
| Continuous Drain Current (ID) | β | 18 A |
| Power Dissipation (PD) | β | 1 W |
| Operating Temperature | β | -55C to +150C (junction) |
| Channel Type | β | N-Channel Enhancement Mode |
| Gate Threshold (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| RDS(on) max @ VGS=10V | β | [DATA_NEEDED: RDS(on) at 10V VGS] |