BSC035N04LSGATMA1 vs BSC054N04NSGATMA1 Comparison

Detailed side-by-side comparison of BSC035N04LSGATMA1 by Infineon and BSC054N04NSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC035N04LSGATMA1

BSC035N04LSGATMA1 - 40V 100A 3.5mΞ© OptiMOS 3 N-MOSFET | Infineon

BSC035N04LSGATMA1 βœ“ Active
Infineon
BSC054N04NSGATMA1

BSC054N04NSGATMA1 - 40V 81A OptiMOS 3 N-Ch MOSFET | Infineon

BSC054N04NSGATMA1 βœ“ Active

Specification Comparison

Parameter BSC035N04LSGATMA1 BSC054N04NSGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.42
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 β€”
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at Tc=25Β°C 100 A β€”
Continuous Drain Current (ID) at Ta=25Β°C 21 A β€”
RDS(on) Max at VGS=10V 3.5 mΞ© β€”
Gate Threshold Voltage (VGS(th)) 1.7 V (typ) β€”
Power Dissipation (Pd) at Ta=25Β°C 2.5 W β€”
Power Dissipation (Pd) at Tc=25Β°C 69 W β€”
Operating Junction Temperature -55Β°C to +150Β°C β€”
Mounting Type Surface Mount Surface Mount
Package PG-TDSON-8-1 (8-pin, exposed drain pad) PG-TDSON-8-5 (SuperSO8 5x6 mm)
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Part Number β€” BSC054N04NSGATMA1
Technology β€” OptiMOS 3 (N-Channel Trench MOSFET)
Continuous Drain Current (ID) at Tc=25C β€” 81 A
Continuous Drain Current (ID) at Ta=25C β€” 17 A
On-Resistance RDS(on) max at VGS=10V β€” 5.4 mOhm
Gate-Source Voltage (VGS) max β€” Β±20 V
Power Dissipation at Tc=25C β€” 57 W
Power Dissipation at Ta=25C β€” 2.5 W
Operating Temperature Range β€” -55C to +150C
MSL Level β€” 1 (per JEDEC J-STD-020)
Gate Drive Voltage (recommended) β€” 10 V
Lead-Free Reflow β€” Yes

Datasheets & Resources

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