BSC036NE7NS3GATMA1 vs BSC093N15NS5ATMA1 Comparison

Detailed side-by-side comparison of BSC036NE7NS3GATMA1 by Infineon and BSC093N15NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC036NE7NS3GATMA1

BSC036NE7NS3GATMA1 - 75V 100A N-Channel OptiMOS 3 MOSFET | Infineon

BSC036NE7NS3GATMA1 βœ“ Active

Specification Comparison

Parameter BSC036NE7NS3GATMA1 BSC093N15NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.82 $1.83
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 β€”
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 75 V β€”
Continuous Drain Current (ID, Tc=25C) 100 A β€”
Pulsed Drain Current (IDM) 400 A β€”
On-Resistance (RDS(on) max @ VGS=10V) 3.6 mOhm β€”
Gate Threshold Voltage (VGS(th) typ) 2.6 V β€”
Total Gate Charge (Qg typ @ VGS=10V) 45 nC β€”
Rise Time (tr typ) 13 ns β€”
Fall Time (tf typ) 11 ns β€”
Power Dissipation (PD max, Tc=25C) 156 W β€”
Power Dissipation (Ta=25C) 2.5 W β€”
Thermal Resistance, Junction-to-Case (RthJC) 0.8 C/W β€”
Operating Temperature Range -55C to +175C [DATA_NEEDED: operating temperature range]
Package PG-TDSON-8-7 (5x6 mm) SuperSO8 5x6 (PG-TDSON-8-7)
Mounting Type Surface Mount Surface Mount
RoHS Status ROHS3 Compliant Compliant
MSL Level 1 [DATA_NEEDED: MSL level]
Technology β€” OptiMOS 5 150V
Drain-Source Voltage (VDS) Max β€” 150 V
Continuous Drain Current (ID) at TC β€” 87 A
Drain-Source On-Resistance (RDS(on)) Max at VGS=10V β€” 9.3 mΞ©
Power Dissipation (PD) at TC β€” 139 W
Gate Drive Voltage (VGS) Recommended β€” 10 V
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) β€” [DATA_NEEDED: total gate charge Qg]
Halogen Free β€” [DATA_NEEDED: halogen free status]

Datasheets & Resources

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