BSC036NE7NS3GATMA1 vs BSC120N03LSGATMA1 Comparison
Detailed side-by-side comparison of BSC036NE7NS3GATMA1 by Infineon and BSC120N03LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC036NE7NS3GATMA1
BSC036NE7NS3GATMA1 - 75V 100A N-Channel OptiMOS 3 MOSFET | Infineon
BSC036NE7NS3GATMA1 β ActiveInfineon
BSC120N03LSGATMA1
BSC120N03LSGATMA1 - 30V 39A OptiMOS 3 N-Channel MOSFET | Infineon
BSC120N03LSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC036NE7NS3GATMA1 | BSC120N03LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | β |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 75 V | 30 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A | β |
| Pulsed Drain Current (IDM) | 400 A | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on) max @ VGS=10V) | 3.6 mOhm | β |
| Gate Threshold Voltage (VGS(th) typ) | 2.6 V | β |
| Total Gate Charge (Qg typ @ VGS=10V) | 45 nC | β |
| Rise Time (tr typ) | 13 ns | β |
| Fall Time (tf typ) | 11 ns | β |
| Power Dissipation (PD max, Tc=25C) | 156 W | β |
| Power Dissipation (Ta=25C) | 2.5 W | β |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.8 C/W | β |
| Operating Temperature Range | -55C to +175C | -55C to +150C (TJ) |
| Package | PG-TDSON-8-7 (5x6 mm) | PG-TDSON-8-5 (SuperSO-8, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | ROHS3 Compliant | Compliant |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| Product Family | β | OptiMOS 3 |
| Continuous Drain Current (ID) at Ta=25C | β | 12 A |
| Continuous Drain Current (ID) at Tc=25C | β | 39 A |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance RDS(on) at VGS=10V | β | 12 mOhm (typical) |
| On-State Resistance RDS(on) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 28 W |