BSC036NE7NS3GATMA1 vs ISC009N06LM5ATMA1 Comparison
Detailed side-by-side comparison of BSC036NE7NS3GATMA1 by Infineon and ISC009N06LM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC036NE7NS3GATMA1
BSC036NE7NS3GATMA1 - 75V 100A N-Channel OptiMOS 3 MOSFET | Infineon
BSC036NE7NS3GATMA1 β Active
Specification Comparison
| Parameter | BSC036NE7NS3GATMA1 | ISC009N06LM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $2.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | OptiMOS 5 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 75 V | 60 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A | β |
| Pulsed Drain Current (IDM) | 400 A | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on) max @ VGS=10V) | 3.6 mOhm | β |
| Gate Threshold Voltage (VGS(th) typ) | 2.6 V | β |
| Total Gate Charge (Qg typ @ VGS=10V) | 45 nC | β |
| Rise Time (tr typ) | 13 ns | β |
| Fall Time (tf typ) | 11 ns | β |
| Power Dissipation (PD max, Tc=25C) | 156 W | β |
| Power Dissipation (Ta=25C) | 2.5 W | β |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.8 C/W | β |
| Operating Temperature Range | -55C to +175C | -55 C to +175 C |
| Package | PG-TDSON-8-7 (5x6 mm) | PG-TSON-8-3 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | ROHS3 Compliant | Compliant |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| Technology | β | OptiMOS 5 60V N-channel trench MOSFET |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | β | 41 A |
| Continuous Drain Current (ID) at Tc | β | 348 A |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS maximum rating] |
| Gate-Source Threshold (VGS(th)) | β | [DATA_NEEDED: VGS threshold typical] |
| On-Resistance RDS(on) max at VGS=10V | β | 0.9 mOhm |
| Power Dissipation at Ta (PD) | β | 3 W |
| Power Dissipation at Tc (PD) | β | 214 W |