BSC040N10NS5ATMA1 vs IPT015N10N5ATMA1 Comparison
Detailed side-by-side comparison of BSC040N10NS5ATMA1 by Infineon and IPT015N10N5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC040N10NS5ATMA1 - 100V 100A N-Ch OptiMOS 5 MOSFET | Infineon
BSC040N10NS5ATMA1 β ActiveInfineon
IPT015N10N5ATMA1
IPT015N10N5ATMA1 - 100V 300A 1.5mΞ© OptiMOS 5 Power MOSFET | Infineon
IPT015N10N5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC040N10NS5ATMA1 | IPT015N10N5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.93 | $2.78 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 | OptiMOSβ’ 5 |
| Drain-Source Voltage (VDS) | 100 V | β |
| Maximum On-Resistance (RDS(on)) | 4 mOhm | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Continuous Drain Current (ID) max | 136 A | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 139 W | β |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8 | PG-HSOF-8-1 (TOLL) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | [DATA_NEEDED: Qg at VGS=10V] |
| Output Capacitance Reduction | Up to 44% vs previous generation | β |
| RDS(on) Reduction | Up to 43% vs previous generation | β |
| RoHS Status | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (per Infineon OptiMOS 5 family) | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | IPT015N10N5ATMA1 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | β | 100 V |
| Continuous Drain Current (ID, Tc) | β | 300 A |
| On-Resistance RDS(on) Max | β | 1.5 mΞ© |
| Power Dissipation (PD, Tc) | β | 375 W |
| Configuration | β | Single |
| Operating Temperature | β | -55Β°C to +175Β°C |
| Gate Threshold VGS(th) | β | [DATA_NEEDED: VGS(th) typical and min/max] |
| Output Capacitance (Coss) | β | Reduced up to 44% vs prior generation (per manufacturer claim) |
| RDS(on) Improvement vs Prior Generation | β | Up to 43% reduction |
| Packaging | β | Tape & Reel |