BSC042NE7NS3GATMA1 vs BSC0902NSATMA1 Comparison

Detailed side-by-side comparison of BSC042NE7NS3GATMA1 by Infineon and BSC0902NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC042NE7NS3GATMA1

BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 βœ“ Active

Specification Comparison

Parameter BSC042NE7NS3GATMA1 BSC0902NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.24 $0.78
Manufacturer Infineon Technologies β€”
Part Number BSC042NE7NS3GATMA1 β€”
Transistor Type N-Channel MOSFET N-Channel MOSFET
Technology OptiMOS 3 β€”
Drain-Source Voltage (VDS) 75 V 30 V
Continuous Drain Current (ID) at Ta 19 A β€”
Continuous Drain Current (ID) at Tc 100 A β€”
RDS(on) max at VGS=10V 4.2 mOhm β€”
Gate-Source Voltage (VGS) max +/-20 V β€”
Gate Threshold Voltage (VGS(th)) typ 1.7 V β€”
Power Dissipation (PD) at Ta 2.5 W β€”
Power Dissipation (PD) at Tc 125 W β€”
Operating Temperature Range -55C to +150C -55C to +150C (Tj)
Package PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TDSON-8-6 (SuperSO8)
Mounting Type Surface Mount Surface Mount
MSL Level 1 β€”
RoHS Status Compliant β€”
Continuous Drain Current (ID, Ta) β€” 24 A
Pulsed Drain Current (IDM, Tc) β€” 100 A
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 48 W
Gate Threshold Voltage (VGS(th) typ) β€” [DATA_NEEDED: VGS(th) typical value]
RDS(on) @ VGS=10V max β€” [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max β€” [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) β€” [DATA_NEEDED: Qg typical]
Qualification β€” JEDEC qualified for target applications
RoHS Compliance β€” Compliant (Pb-free lead plating)
Halogen-Free β€” Yes, per IEC 61249-2-21
Avalanche Rated β€” Yes (100% avalanche tested)

Datasheets & Resources

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