BSC042NE7NS3GATMA1 vs BSC0993NDATMA1 Comparison

Detailed side-by-side comparison of BSC042NE7NS3GATMA1 by Infineon and BSC0993NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC042NE7NS3GATMA1

BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 βœ“ Active
Infineon
BSC0993NDATMA1

BSC0993NDATMA1 - 30V 17A Dual N-Ch OptiMOS 5 Array | Infineon

BSC0993NDATMA1 βœ“ Active

Specification Comparison

Parameter BSC042NE7NS3GATMA1 BSC0993NDATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.24 $1.32
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC042NE7NS3GATMA1 β€”
Transistor Type N-Channel MOSFET β€”
Technology OptiMOS 3 OptiMOS 5 trench MOSFET
Drain-Source Voltage (VDS) 75 V β€”
Continuous Drain Current (ID) at Ta 19 A β€”
Continuous Drain Current (ID) at Tc 100 A β€”
RDS(on) max at VGS=10V 4.2 mOhm β€”
Gate-Source Voltage (VGS) max +/-20 V β€”
Gate Threshold Voltage (VGS(th)) typ 1.7 V β€”
Power Dissipation (PD) at Ta 2.5 W β€”
Power Dissipation (PD) at Tc 125 W β€”
Operating Temperature Range -55C to +150C -55C to +150C (junction)
Package PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TISON-8
Mounting Type Surface Mount Surface Mount
MSL Level 1 [DATA_NEEDED: MSL level]
RoHS Status Compliant Compliant
Product Series β€” OptiMOS 5 30V
Configuration β€” Dual N-Channel (Array)
Drain-Source Voltage (Vds) β€” 30 V
Continuous Drain Current (Id) @ Ta β€” 17 A
Channel Mode β€” Enhancement
ESD Protection β€” Yes (integrated)
Lead-Free β€” Yes
Rds(on) max @ Vgs=10V β€” [DATA_NEEDED: Rds(on) value]
Gate Threshold Voltage (Vgs(th)) β€” [DATA_NEEDED: Vgs(th) value]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg value]

Datasheets & Resources

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