BSC042NE7NS3GATMA1 vs IPB020NE7N3GATMA1 Comparison

Detailed side-by-side comparison of BSC042NE7NS3GATMA1 by Infineon and IPB020NE7N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC042NE7NS3GATMA1

BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 βœ“ Active
Infineon
IPB020NE7N3GATMA1 IPB020NE7N3GATMA1 - 75V 120A N-Channel MOSFET | Infineon OptiMOS

IPB020NE7N3GATMA1 - 75V 120A N-Channel MOSFET | Infineon OptiMOS

IPB020NE7N3GATMA1 βœ“ Active

Specification Comparison

Parameter BSC042NE7NS3GATMA1 IPB020NE7N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.24 $2.31
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC042NE7NS3GATMA1 IPB020NE7N3GATMA1
Transistor Type N-Channel MOSFET β€”
Technology OptiMOS 3 OptiMOS 3 N-Channel Power MOSFET
Drain-Source Voltage (VDS) 75 V 75 V
Continuous Drain Current (ID) at Ta 19 A β€”
Continuous Drain Current (ID) at Tc 100 A 120 A
RDS(on) max at VGS=10V 4.2 mOhm β€”
Gate-Source Voltage (VGS) max +/-20 V β€”
Gate Threshold Voltage (VGS(th)) typ 1.7 V β€”
Power Dissipation (PD) at Ta 2.5 W β€”
Power Dissipation (PD) at Tc 125 W 300 W
Operating Temperature Range -55C to +150C -55C to +175C (junction)
Package PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TO263-3 (DΒ²PAK, TO-263AB)
Mounting Type Surface Mount Surface Mount
MSL Level 1 [DATA_NEEDED: MSL rating]
RoHS Status Compliant Compliant
Polarity β€” N-Channel
On-State Resistance RDS(on) β€” 2.0 mΞ© typical (per part number code)
Configuration β€” Single
Gate Threshold Voltage VGS(th) β€” [DATA_NEEDED: VGS(th) min/typ/max]
Gate Charge Qg β€” [DATA_NEEDED: total gate charge]
Lead-Free β€” Yes
Avalanche Rated β€” Yes (per OptiMOS 3 family datasheet)

Datasheets & Resources

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