BSC0501NSIATMA1 vs BSC034N06NSATMA1 Comparison
Detailed side-by-side comparison of BSC0501NSIATMA1 by Infineon and BSC034N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0501NSIATMA1
BSC0501NSIATMA1 - 30V N-Ch OptiMOS 5 MOSFET 100A | Infineon
BSC0501NSIATMA1 β ActiveInfineon
BSC034N06NSATMA1
BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon
BSC034N06NSATMA1 β ActiveSpecification Comparison
| Parameter | BSC0501NSIATMA1 | BSC034N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.65 |
| Manufacturer | Infineon | β |
| Product Family | OptiMOS 5 25V/30V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 30 V | 60 V |
| Continuous Drain Current (ID) at Ta | 29 A | β |
| Continuous Drain Current (ID) at Tc | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: IDM] |
| Power Dissipation at Ta (PD) | 2.5 W | β |
| Power Dissipation at Tc (PD) | 50 W | β |
| Gate-Source Voltage (VGS) | Β±20 V | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th)] |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at 10V VGS] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: Qg] |
| Operating Junction Temperature | -55C to +150C | β |
| Package | PG-TDSON-8-6 (SuperSO8) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| RoHS Status | Compliant | Compliant |
| Avalanche Rated | Yes | β |
| Technology | Trench-gate OptiMOS 5 | OptiMOS 5 |
| Polarity | β | N-Channel |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| On-Resistance RDS(on) max at VGS=10V | β | 3.4 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation at Ta=25C | β | 2.5 W |
| Power Dissipation at Tc=25C | β | 74 W |
| Operating Temperature Range | β | -55C to +150C |