BSC0501NSIATMA1 vs IPC90N04S5L3R3ATMA1 Comparison
Detailed side-by-side comparison of BSC0501NSIATMA1 by Infineon and IPC90N04S5L3R3ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0501NSIATMA1
BSC0501NSIATMA1 - 30V N-Ch OptiMOS 5 MOSFET 100A | Infineon
BSC0501NSIATMA1 β ActiveInfineon
IPC90N04S5L3R3ATMA1
IPC90N04S5L3R3ATMA1 - 40V 90A OptiMOS N-Channel MOSFET | Infineon
IPC90N04S5L3R3ATMA1 β ActiveSpecification Comparison
| Parameter | BSC0501NSIATMA1 | IPC90N04S5L3R3ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.96 |
| Manufacturer | Infineon | Infineon Technologies |
| Product Family | OptiMOS 5 25V/30V | OptiMOS 5 40V |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID) at Ta | 29 A | β |
| Continuous Drain Current (ID) at Tc | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| Power Dissipation at Ta (PD) | 2.5 W | β |
| Power Dissipation at Tc (PD) | 50 W | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at 10V VGS] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | β |
| Operating Junction Temperature | -55C to +150C | -55Β°C to +175Β°C |
| Package | PG-TDSON-8-6 (SuperSO8) | PG-TDSON-8-34 (TDSON-8) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | β |
| Avalanche Rated | Yes | β |
| Technology | Trench-gate OptiMOS 5 | β |
| FET Type | β | N-Channel, Enhancement Mode |
| Continuous Drain Current (ID) at TC=25Β°C | β | 90 A |
| On-Resistance RDS(on) max at VGS=10V | β | 3.3 mΞ© |
| On-Resistance RDS(on) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage VGS(th) | β | 1.7 V to 2.7 V (logic level) |
| Total Power Dissipation (TC=25Β°C) | β | 62 W |
| Storage Temperature Range | β | [DATA_NEEDED: storage temp range] |
| MSL Moisture Sensitivity | β | MSL1 (per JEDEC J-STD-020) |
| Peak Reflow Temperature | β | 260Β°C |
| Qualification | β | AEC-Q101 automotive qualified |
| Avalanche Tested | β | 100% (production-level) |
| RoHS Compliance | β | Compliant (Green Product) |