BSC0502NSIATMA1 vs BSC014N04LSATMA1 Comparison

Detailed side-by-side comparison of BSC0502NSIATMA1 by Infineon and BSC014N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC0502NSIATMA1

BSC0502NSIATMA1 - 30V N-Channel OptiMOS 5 MOSFET 2.3mOhm | Infineon

BSC0502NSIATMA1 βœ“ Active
Infineon
BSC014N04LSATMA1

BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon

BSC014N04LSATMA1 βœ“ Active

Specification Comparison

Parameter BSC0502NSIATMA1 BSC014N04LSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.85 $0.74
FET Type N-Channel β€”
Technology OptiMOS 5 (Trench MOSFET) Trench (OptiMOS 5, thin-wafer)
Drain-Source Voltage (VDS) Max 30 V β€”
Continuous Drain Current (ID) at TC 100 A β€”
Continuous Drain Current (ID) at TA 26 A β€”
RDS(on) Max at VGS=10V 2.3 mOhm β€”
Gate Charge QG (0V to 4.5V) Typ 9.0 nC β€”
Output Charge QOSS Typ 13.5 nC β€”
Power Dissipation at TA (Ta=25C) 2.5 W β€”
Power Dissipation at TC (Tc=25C) 43 W β€”
Gate Threshold Voltage VGS(th) Typ [DATA_NEEDED: VGS(th) typical value] β€”
Operating Temperature Range -55C to +150C -55C to +175C
Package PG-TDSON-8 (SuperSO8 5x6) SuperSO8 (TDSON-8 FL) 5x6 mm
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Manufacturer β€” Infineon Technologies
Series β€” OptiMOS 5
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID) at Ta β€” 32 A
Continuous Drain Current (ID) at Tc β€” 100 A
RDS(on) max at VGS=10 V β€” 1.4 mOhm
Power Dissipation at Ta β€” 2.5 W
Power Dissipation at Tc β€” 96 W
Gate-Source Voltage (VGS) max β€” 20 V
MSL Level β€” 1 (unlimited)

Datasheets & Resources

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