BSC0502NSIATMA1 vs BSC019N08NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC0502NSIATMA1 by Infineon and BSC019N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0502NSIATMA1
BSC0502NSIATMA1 - 30V N-Channel OptiMOS 5 MOSFET 2.3mOhm | Infineon
BSC0502NSIATMA1 β ActiveInfineon
BSC019N08NS5ATMA1
BSC019N08NS5ATMA1 - 80V 237A 1.9mOhm OptiMOS 5 MOSFET | Infineon
BSC019N08NS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC0502NSIATMA1 | BSC019N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.85 | $1.78 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (Trench MOSFET) | OptiMOS 5 (N-channel trench) |
| Drain-Source Voltage (VDS) Max | 30 V | β |
| Continuous Drain Current (ID) at TC | 100 A | β |
| Continuous Drain Current (ID) at TA | 26 A | β |
| RDS(on) Max at VGS=10V | 2.3 mOhm | β |
| Gate Charge QG (0V to 4.5V) Typ | 9.0 nC | β |
| Output Charge QOSS Typ | 13.5 nC | β |
| Power Dissipation at TA (Ta=25C) | 2.5 W | β |
| Power Dissipation at TC (Tc=25C) | 43 W | β |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: VGS(th) typical value] | β |
| Operating Temperature Range | -55C to +150C | -55 C to +150 C |
| Package | PG-TDSON-8 (SuperSO8 5x6) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) max | β | 80 V |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Continuous Drain Current (ID) at TA=25C | β | 28 A |
| Continuous Drain Current (ID) at TC=25C | β | 237 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max at VGS=10V | β | 1.9 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | 3.0 V |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (TA=25C) | β | 3 W |
| Power Dissipation (TC=25C) | β | 214 W |
| MSL Level | β | 1 |
| Avalanche Rated | β | Yes |