BSC0502NSIATMA1 vs BSC034N06NSATMA1 Comparison
Detailed side-by-side comparison of BSC0502NSIATMA1 by Infineon and BSC034N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0502NSIATMA1
BSC0502NSIATMA1 - 30V N-Channel OptiMOS 5 MOSFET 2.3mOhm | Infineon
BSC0502NSIATMA1 β ActiveInfineon
BSC034N06NSATMA1
BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon
BSC034N06NSATMA1 β ActiveSpecification Comparison
| Parameter | BSC0502NSIATMA1 | BSC034N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.85 | $0.65 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (Trench MOSFET) | OptiMOS 5 |
| Drain-Source Voltage (VDS) Max | 30 V | β |
| Continuous Drain Current (ID) at TC | 100 A | β |
| Continuous Drain Current (ID) at TA | 26 A | β |
| RDS(on) Max at VGS=10V | 2.3 mOhm | β |
| Gate Charge QG (0V to 4.5V) Typ | 9.0 nC | β |
| Output Charge QOSS Typ | 13.5 nC | β |
| Power Dissipation at TA (Ta=25C) | 2.5 W | β |
| Power Dissipation at TC (Tc=25C) | 43 W | β |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: VGS(th) typical value] | β |
| Operating Temperature Range | -55C to +150C | -55C to +150C |
| Package | PG-TDSON-8 (SuperSO8 5x6) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 60 V |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V | β | 3.4 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |
| Power Dissipation at Ta=25C | β | 2.5 W |
| Power Dissipation at Tc=25C | β | 74 W |
| MSL Level | β | [DATA_NEEDED: MSL level] |