BSC0502NSIATMA1 vs BSC0501NSIATMA1 Comparison
Detailed side-by-side comparison of BSC0502NSIATMA1 by Infineon and BSC0501NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0502NSIATMA1
BSC0502NSIATMA1 - 30V N-Channel OptiMOS 5 MOSFET 2.3mOhm | Infineon
BSC0502NSIATMA1 β ActiveInfineon
BSC0501NSIATMA1
BSC0501NSIATMA1 - 30V N-Ch OptiMOS 5 MOSFET 100A | Infineon
BSC0501NSIATMA1 β ActiveSpecification Comparison
| Parameter | BSC0502NSIATMA1 | BSC0501NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.85 | $0.65 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (Trench MOSFET) | Trench-gate OptiMOS 5 |
| Drain-Source Voltage (VDS) Max | 30 V | β |
| Continuous Drain Current (ID) at TC | 100 A | β |
| Continuous Drain Current (ID) at TA | 26 A | β |
| RDS(on) Max at VGS=10V | 2.3 mOhm | β |
| Gate Charge QG (0V to 4.5V) Typ | 9.0 nC | β |
| Output Charge QOSS Typ | 13.5 nC | β |
| Power Dissipation at TA (Ta=25C) | 2.5 W | β |
| Power Dissipation at TC (Tc=25C) | 43 W | β |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: VGS(th) typical value] | β |
| Operating Temperature Range | -55C to +150C | β |
| Package | PG-TDSON-8 (SuperSO8 5x6) | PG-TDSON-8-6 (SuperSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon |
| Product Family | β | OptiMOS 5 25V/30V |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at Ta | β | 29 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 50 W |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) max at 10V VGS] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Operating Junction Temperature | β | -55C to +150C |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | β | Yes |