BSC0504NSIATMA1 vs IPT007N06NATMA1 Comparison
Detailed side-by-side comparison of BSC0504NSIATMA1 by Infineon and IPT007N06NATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0504NSIATMA1
BSC0504NSIATMA1 - 30V 21A N-MOSFET | Infineon | Power Switching
BSC0504NSIATMA1 β ActiveInfineon
IPT007N06NATMA1
IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon
IPT007N06NATMA1 β ActiveSpecification Comparison
| Parameter | BSC0504NSIATMA1 | IPT007N06NATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $2.84 |
| Transistor Type | N-channel MOSFET | β |
| Drain-to-Source Voltage | 30 V | β |
| Continuous Drain Current at Ta | 21 A | β |
| Continuous Drain Current at Tc | 72 A | β |
| Power Dissipation at Ta | 2.5 W | β |
| Power Dissipation at Tc | 30 W | β |
| Technology Family | OptiMOS 5 | β |
| Package | PG-TDSON-8-6 | PG-HSOF-8-1 (TOLL) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 8 pins | β |
| Exposed Pad | Yes, according to distributor package description | β |
| On-State Resistance | [DATA_NEEDED: on-state resistance] | β |
| Gate Charge | [DATA_NEEDED: gate charge] | β |
| Gate Threshold Voltage | [DATA_NEEDED: gate threshold voltage] | β |
| Thermal Resistance | [DATA_NEEDED: thermal resistance] | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | -55 C to +175 C (TJ) |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | β |
| RoHS Status | unknown | Compliant |
| Lead-Free Status | unknown | β |
| Halogen-Free Status | unknown | β |
| REACH Status | unknown | β |
| Technology | β | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID, TC=25C) | β | 300 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on), VGS=10V max) | β | 0.75 mOhm |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max] |
| Power Dissipation (PD, TC=25C) | β | 375 W |
| Configuration | β | Single N-channel |
| Gate Charge (QG) | β | [DATA_NEEDED: total gate charge] |
| Avalanche Energy (EAS) | β | [DATA_NEEDED: single-pulse avalanche energy] |
| Thermal Resistance (RthJC max) | β | [DATA_NEEDED: RthJC] |
| MSL Level | β | MSL 1 (per JEDEC J-STD-020) |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |
| Standard Pack Quantity | β | 3000 (Tape & Reel) |