BSC050N03LSGATMA1 vs BSC030N03LSGATMA1 Comparison
Detailed side-by-side comparison of BSC050N03LSGATMA1 by Infineon and BSC030N03LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC050N03LSGATMA1
BSC050N03LSGATMA1 - 30V 80A 5mOhm OptiMOS 3 N-FET | Infineon
BSC050N03LSGATMA1 β ActiveInfineon
BSC030N03LSGATMA1
BSC030N03LSGATMA1 - 30V 100A 3mOhm OptiMOS 3 N-FET | Infineon
BSC030N03LSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC050N03LSGATMA1 | BSC030N03LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC050N03LSGATMA1 | β |
| Technology | OptiMOS 3 (N-channel trench MOSFET) | β |
| Drain-Source Voltage (VDS) Max | 30 V | β |
| Continuous Drain Current (ID) at Tc | 80 A | β |
| Continuous Drain Current (ID) at Ta | 18 A | β |
| On-State Resistance (RDS(on)) Max at VGS=10V | 5 mOhm | β |
| Power Dissipation (PD) at Tc | 50 W | β |
| Power Dissipation (PD) at Ta | 2.5 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| Package | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +150 C | β |
| Channel Type | N-Channel | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 |
| Series | β | OptiMOS 3 |
| FET Type | β | N-Channel |
| Drain-Source Voltage (Vdss) | β | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | β | 100 A |
| Continuous Drain Current (Id) @ Ta=25C | β | 23 A |
| RDS(on) Max @ VGS=10V | β | 3 mOhm |
| RDS(on) Max @ VGS=4.5V | β | [DATA_NEEDED: typical RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (Vgs th) Typ | β | 2.2 V |
| Gate Charge (Qg) Typ @ VGS=15V | β | 55 nC |
| Output Charge (Qoss) | β | 66 pF |
| Input Capacitance (Ciss) Typ | β | 4.3 nF |
| Power Dissipation (Pd) @ Ta=25C | β | 2.5 W |
| Power Dissipation (Pd) @ Tc=25C | β | 69 W |
| Operating Junction Temperature | β | -55C to +150C |
| Avalanche Rated | β | Yes (100% tested) |