BSC050N04LSGATMA1 vs BSC011N03LSTATMA1 Comparison
Detailed side-by-side comparison of BSC050N04LSGATMA1 by Infineon and BSC011N03LSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC050N04LSGATMA1
BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon
BSC050N04LSGATMA1 β ActiveInfineon
BSC011N03LSTATMA1
BSC011N03LSTATMA1 - 30V 100A OptiMOS N-Channel MOSFET | Infineon
BSC011N03LSTATMA1 NrndSpecification Comparison
| Parameter | BSC050N04LSGATMA1 | BSC011N03LSTATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Nrnd |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $1.55 |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 40 V | β |
| Gate-to-Source Voltage (VGS) | Β±20 V | β |
| Continuous Drain Current at 25C (ID, Ta) | 18 A | β |
| Continuous Drain Current at 25C (ID, Tc) | 85 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation at Ta (PD) | 2.5 W | β |
| Power Dissipation at Tc (PD) | 57 W | β |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | β |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Technology | OptiMOS 3 (trench MOSFET) | Trench MOSFET |
| Package | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) | PG-TDSON-8 FL (8-pin, exposed drain pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C | β |
| Avalanche Energy Rated | Yes (single-pulse avalanche) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at TA=25C | β | 39 A |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | β | 1.1 mOhm (typical 0.9 mOhm) |
| Gate-Source Threshold Voltage VGS(th) typ | β | 2 V |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Total Gate Charge (Qg) typ | β | 72 nC |
| Power Dissipation at TA=25C | β | 3 W |
| Power Dissipation at TC=25C | β | 115 W |
| Operating Junction Temperature | β | -55C to +150C |
| Configuration | β | Single with built-in diode |