BSC050N04LSGATMA1 vs BSC019N06NSATMA1 Comparison
Detailed side-by-side comparison of BSC050N04LSGATMA1 by Infineon and BSC019N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC050N04LSGATMA1
BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon
BSC050N04LSGATMA1 β ActiveInfineon
BSC019N06NSATMA1
BSC019N06NSATMA1 - 60V 100A 1.95mΞ© OptiMOS 5 MOSFET | Infineon
BSC019N06NSATMA1 β ActiveSpecification Comparison
| Parameter | BSC050N04LSGATMA1 | BSC019N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $0.92 |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 40 V | β |
| Gate-to-Source Voltage (VGS) | Β±20 V | β |
| Continuous Drain Current at 25C (ID, Ta) | 18 A | β |
| Continuous Drain Current at 25C (ID, Tc) | 85 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | [DATA_NEEDED: IDM pulse rating] |
| Power Dissipation at Ta (PD) | 2.5 W | β |
| Power Dissipation at Tc (PD) | 57 W | β |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | β |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Technology | OptiMOS 3 (trench MOSFET) | β |
| Package | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C | -55C to +150C (junction) |
| Avalanche Energy Rated | Yes (single-pulse avalanche) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSC019N06NSATMA1 |
| Technology / Family | β | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) Max | β | 60 V |
| Continuous Drain Current (ID) at TA=25C | β | 100 A |
| On-State Resistance RDS(on) Max @ VGS=10V | β | 1.95 mΞ© (typ) |
| Gate-Source Threshold Voltage VGS(th) Typ | β | 3.3 V |
| Power Dissipation (PD) at TA=25C | β | 136 W |
| Channel Type | β | N-Channel Enhancement Mode |
| Lead-Free | β | Yes |
| Avalanche Rated | β | Yes |