BSC050N04LSGATMA1 vs BSC026N04LSATMA1 Comparison
Detailed side-by-side comparison of BSC050N04LSGATMA1 by Infineon and BSC026N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC050N04LSGATMA1
BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon
BSC050N04LSGATMA1 β ActiveInfineon
BSC026N04LSATMA1
BSC026N04LSATMA1 - 40V N-Ch OptiMOS 2.6mΞ© MOSFET | Infineon
BSC026N04LSATMA1 β ActiveSpecification Comparison
| Parameter | BSC050N04LSGATMA1 | BSC026N04LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $0.78 |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 40 V | β |
| Gate-to-Source Voltage (VGS) | Β±20 V | β |
| Continuous Drain Current at 25C (ID, Ta) | 18 A | β |
| Continuous Drain Current at 25C (ID, Tc) | 85 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | β |
| Power Dissipation at Ta (PD) | 2.5 W | β |
| Power Dissipation at Tc (PD) | 57 W | β |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | β |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: VGS(th) value] |
| Technology | OptiMOS 3 (trench MOSFET) | Trench-gate OptiMOSβ’ 5 |
| Package | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) | PG-TDSON-8-6 (TDSON 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C | -55Β°C to +150Β°C |
| Avalanche Energy Rated | Yes (single-pulse avalanche) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | β |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | OptiMOSβ’ 5 N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | β | 40 V |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Continuous Drain Current (ID, Ta) | β | 23 A |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 100 A |
| Pulsed Drain Current (IDM, Tc=25Β°C) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) typ @ VGS=10V | β | 2.6 mΞ© |
| On-Resistance RDS(on) max @ VGS=10V | β | [DATA_NEEDED: max RDS(on)] |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 63 W |
| Channel Type | β | N-Channel |