BSC050N04LSGATMA1 vs BSZ100N03MSGATMA1 Comparison
Detailed side-by-side comparison of BSC050N04LSGATMA1 by Infineon and BSZ100N03MSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC050N04LSGATMA1
BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon
BSC050N04LSGATMA1 β ActiveInfineon
BSZ100N03MSGATMA1 - 30V N-Ch OptiMOS 40A TSDSON-8 MOSFET | Infineon
BSZ100N03MSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC050N04LSGATMA1 | BSZ100N03MSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $0.41 |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 40 V | β |
| Gate-to-Source Voltage (VGS) | Β±20 V | β |
| Continuous Drain Current at 25C (ID, Ta) | 18 A | β |
| Continuous Drain Current at 25C (ID, Tc) | 85 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | β |
| Power Dissipation at Ta (PD) | 2.5 W | β |
| Power Dissipation at Tc (PD) | 57 W | β |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | β |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Technology | OptiMOS 3 (trench MOSFET) | Trench MOSFET (OptiMOS) |
| Package | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) | PG-TSDSON-8 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C | -55C to +150C (junction) |
| Avalanche Energy Rated | Yes (single-pulse avalanche) | β |
| RoHS Status | Compliant | β |
| MSL Level | 1 | MSL1 (per JEDEC J-STD-020) |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | OptiMOS 25V / 30V |
| Transistor Type | β | N-Channel MOSFET |
| Configuration | β | Single with built-in body diode |
| Maximum Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at TA | β | 10 A |
| Continuous Drain Current (ID) at TC | β | 40 A |
| Power Dissipation (PD) at TA | β | 2.1 W |
| Power Dissipation (PD) at TC | β | 30 W |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: Β±20 V typical per datasheet; verify in datasheet] |
| Terminal Finish | β | Tin (Pb-free) |
| Qualification | β | JEDEC - target application qualified |
| Avalanche Tested | β | 100% (per JEDEC) |
| RoHS Compliance | β | Compliant (Pb-free plating) |
| Halogen-Free | β | Yes (per IEC 61249-2-21) |
| RDS(on) at VGS=10V (typical) | β | [DATA_NEEDED: see datasheet Diagram 1] |
| Gate Charge Qg (typical) | β | [DATA_NEEDED: see datasheet] |